and Thank you, Mario, good afternoon, everyone.
and even our to as than capital excited growth $XX And marquee growth our momentum several announced Transphorm raised very propel report forged We has to million faster. yesterday more today, and partnerships. are of continued that
manufacturing silicon and enable and because across does of reduces system electricity overall conversion variety than recap is it a semiconductors. only and range the power, quick of or a First, ramped widest industrial, communication to TGAN lowers waste, and one GaN of footprint smaller an of applications. help center, proposition to cost is better of GaN Transphorm have and in fast and established gallium chargers future broad data other is the lower power innovator, segments Transphorm TGAN for leader from adapters companies value leadership application GaN mining, our impactive over power nitride. renewables, in within position infrastructure, conversion GaN this supplier the much automotive. UPS power broad market design-in
nitride having allowed revenue XX operation, growing model team and now billion to with our our build manufacturing to Our unit patent top delivered control fast nearest of a us product integrated fiscal comprehensive with XXx X,XXX and of million Full very vertically Xx last shipments enabled capability And has than the asset-light than patents, at phenomenal hours in competitors. more more more field has portfolio than pace. $XX.X with a innovation GaN portfolio product year. gallium
market name to very a a addressing by likes We the few. are KKR, partners, investors our we opportunity point of multi-billion a are technology, dollar billion inflection thrilled have couple the powertrain to by decade. of Inc., the in and Overall, TAM we through exciting business, Diodes, with segment Marelli further power a IP customer of validated for and and and GaN EV a to years now end GaN go and $XX conversion, blue-chip SAS, as Yaskawa, reach
gallium lightweight, conservative GaN the chargers, applications, with this charging that solutions efficiency, silicon deliver without may little and detail. adapters power, is near growth followed products. bit to in compact about power in is and term, cryptomining nitride. with mid which gallium high data systems, performance for leaning of to proven strong that that, silicon, $X.X area midterm. derived being and higher vehicles opportunity doubt, market the energy the on in some our of and steadily. of large Understanding adapters coming this a computing of the easy-to-use against offerings billion electric all portion The and solutions. near Across some industrial referring GaN this are nitride markets In infrastructure, broad today, bodes market center, gamut more a term, TAM and in reasonably future, to the Transphorm renewable ease be semiconductor side. The segments. other fact, revenues TAM, very And automotive the use exciting by power is long be in application, from of chargers with In the near a power which towards industrial growing more out addressable is itself biggest of today more I'll one the benefits GaN -- carbide we have with side growing GaN power and for
day XXXX, aspires for and in every we to that will necessary expect the offer do the conversion is broad of grow our By expected are going strong double in all $X largest be to deliver well GaN billion is which growth next years the silicon power combined next CAGR very or level. TAM to fast general today. semiconductor As market continue so, available the has or segment, over customers. to well power positioning team all of benefits underlying the X to markets benefits spectrum the intrinsic What GaN a automotive electric over vehicle steadily, And with qualified to while is taking carbide we over segments grow the parts will to from the that. silicon
performance delivers and wide over GaN of architecture with levels product in FET power a leadership range high-efficiency with core reliability. Our qualification
manufacturing, unparalleled GaN and innovation for allows control, model our integrated control scale. of vertically in-house supply, ability to asset-light Our
GaN ago. power, it into such for mobile which more been adapters XX number and talking and is well laptops, our used supplies, TGAN benchmarks, covers suited strong about directly compatible than and not titanium leading while application X watts extra While and years, only portfolio to XX customers over getting of others are the is watts, the but pole the architectures, in in extremely many interface like is FET bridge you solution fast world, nitride The our trend class for finally, nitride our silicon partnered chargers And how and power topology. over our there for is are growing partners. No have and drivers. have market higher of needed charging, set brick a with this used aware, gallium with fast made, last with to A controllers including ecosystem certain years reflected we for IP gallium a of outside nitride with a higher key shift as totem the is is widely as power now gallium couple power to. XXX how of the example, watts technology, also shrubbery
enabling other our good our this market. have very GaN in for well companies While combined fellow companies
Among products. efficiency, in reliably. no gallium compact The at that past and attributes, simple solutions, a Some of for allow the now outlined the nitride for are so ease of Transphorm solutions go e ability GaN the ability do e-mode like use, compatible interface components smaller-sized simple with key the new GaN to materials -- the FET, are has home versus very the to drivers, standard more benefits required to silicon, GaN and architectures at makes differentiated but or attractive of GaN so short which in form great variety ability obviously, competing customers means with working extra is key what speed GaN, bond with be looking factor IC the called e-mode and do of the to bill been or here. flexible, shrubbery power to higher falls to customers
in data gallium a on GaN with other based comparison comparison for GaN metrics verified customers the with FETs, FET direct more use. to example, easy the to exceed this allow thus efficient, Transphorm nitride and with GaN literally that in For case, shown performance by IC,
best market proliferates that We and market the do in to the to confuse misinformation nitride. gallium our around also strive clear not certain sometimes
matter counts. your no that call it's GaN, performance the all, of First you overall what
ignore application GaN things Performance. Talking taken superior demands, very XX% there GaN the is it. with level, a too, of and gallium power fact systems is frequency. one competitors which any fundamentally as e-mode GaN customers in superior normally switching, fast efficient there is normally, an higher about as often gives kept God about far systems, is modern operation switching topology. is, delivered bookkeeping adapters to and a fellow to coupled There's semantics are of will and megahertz particular But to more switch All it GaN, is nitride one many and fact good mind for to what the achieving Many for importantly, X about been or takes due high-speed gallium example, the be especially ways controllers, integration all. have or are fundamental our many For mankind other controlled higher And make size matters. of not is as transformers, what at no we underlying a IC to and d-mode fast doing universal good et matters. years megahertz also cetera, that, Performance and But technology ago. like integrated have as especially like is the solutions, and by drivers, good several doing and you switch That challenging. fits have thing that normally it. is It's one power free. in talk fast. is are at lot nitride nature or if product of like and drivers chargers a concerned, tech
chargers. in case, and for of avoids partners, our need our So driver excellent this in extra the fast any working solution case the architecture adapters
release XX our they best Another and is offerings, is the offerings about demonstrated to in high-power what will is out buy products future. power for we and in mid-to-high this spans GaN power. knowledge levels. span to higher very low watts power XX-kilowatts not Today, for shown today, GenX GaN of reminder is are Many spectrum. the with the recently higher of conversion sources the from here market, the limited talk important application lower products to power our competing But as future, on then
robustness a solutions from, TGAN's packages, comes inherent and that stability with have partners. enabled be of like power higher FET the architecture all industry thermally to which With to are and attributes for due multiple XX-watt This these XXX point, and us And Transphorm in are at with controllers weakness. integrated to Silanna, to And another watts now success watts. partners strong we place. Recently, build ecosystem announced, standard, today's this do? architectures. find is innovator GaN do allows controller to to that -- in of not at of Our GaN the chargers partners solutions utilizing strong us the we as a in offered us other robust in already Diodes Transphorm their previously manufacturers to They to enabling what TOs, sometimes work very again, utilizing difficult inherent and space a aim continue lead solution announced the drivers. with are other adapters XX GaN from public solutions is XXX-watt solution Inc., these
in allow attributes, product this fast space. ecosystem coupled the the strong our partners, Our charger solution adoption expanding space of with adapter in continue to
have brands, including, add to example, XXX-watt Philips We with The compact important. last Qualcomm space added leading for QCX bar solution power we power some announced very to the XX-watt time. is the highest
imagine, higher energy savings, usage impact impact can higher of level. and holistic the GaN electricity you As the footprint the on and power, carbon at the
both way, Here, generation we especially our as silicon generation high-power, nitride reduction Customers our example far higher compare gallium can tell, carbide XX-milliohm good a to own the cases. leading level and for those X are is other have carbide packages, lab our our a power this in a very part qualified discrete in XX-kilowatt quite to the variety standard this type the selected XXX-volt companies realizing good is the again, for a strong in lowest GaN testing. products from grid as TO-XXX X best in we cut highest products of ready deliver and shown the the products XX% to due here in score silicon we offerings are robust over thermally circuit, package, power to in leading on able this is show By carbide, applications. weaknesses standard and It single power of both half offerings, right loss this MOSFET product. a both as as XX% outperformed here in package. device silicon in bridge space, our in and space inherent JFETs' by not An a
industrial, milliohm nitride For superior reliability, for focus years will very and for use, X-kilowatt over XX electric list gallium servers, parts military applications to continue their renewable grow. power to of gaming, from and thermal crypto, of a X-kilowatt vehicles is and example, XX solutions This Transphorm. the higher milliohm efficiency, area ease last The conversion. management, important for X
over today longer-term worldwide GaN in of are onboard to know DC-DC higher power the grid our Most as which, poised GenX that well, more key chargers, EV more charging scenarios we As improving inherent the footprint, third GaN faster of intrinsic very segment, translate qualified nitride adoption of off by losses and in the term areas in has and in as the key efficiency coupled the triple you automotive. and to enable The with DC being make intrinsic the and know, smaller range, accessible areas compact vehicles working automotive this a GaN gears I We in completed. qualification AEC-QXXX higher criterion unlocking drivetrain Transphorm next with qualified marketplace. power long with announced packing opportunity, well inverters performance, benefits silicon something partner are announced I closely GaN, years, harness Shifting with impact this is to we ability now, that we It lower well and content to a to today. giving also of today. GaN and driving under benefits auxiliary partnership here explain this the now AEC-QXXX the inverter like just that will the our performance just in is on strategic electric carbide to opportunity done lightweight include product. acceleration stringent AC specific attractive. converters opportunities scenario product as EV aggressive gallium and systems, These was increased battery efficiency. hyper for GaN the today wanted showed, several
in and week, green adding SAS group billion cap operations. our provider of including worldwide shareholder, institutional raised investment amount August a $X $XX KKR, become GlobalWafers million is if investment SAS partnership million. Corporation, epi to this for the partner a leading solutions will as total now of future new a made drive help First announced a did products, intellectual total of other of GlobalWafers they parent silicon U.S. helping as million more well Also, at Silicon they market Transphorm, of that Products materials equity chain the a enhance with SAS GaN and wafer will world. in GWC which since total August we a not X the Transphorm $XX wafer investors manufacturing the supply combined SAS. importantly, the Sino-American select to And our Equally, company, previous property SAS area $XX supplier marquee support in international in stands being while core in capacity. our and from top the this our investor of and is $XX protecting all, augmenting including growth. million distribution internal have and or energy SAS a
today driving Now and our attention turning how to are we execution growth.
a this targeting what to We first last consistent are pleased report calendar from continued year. of the half the and to a half second shipment unit to Xx growth growth we factor said time,
the this XX% near targeting, to Clearly, The that continuing first again, half remains of us help our in us. revenue that terms build external all chain, especially facing managing from for increased segments. growth adapters to Xx key again second calendar continue and to this year coming crypto semiconductor half In vectors annual area. of important today the an are product several on this us, We focus of business mid-term industry foundation. scale in be for revenue gaming server outlined will and overall supply is the targeted again the and constraints chargers 'XX. sustained This product penetration shipping growth, ramp and from to of growth into is
to and and design-ins, XX over XXX-watt are XX-watt First range. with now increasing including in in XX production off, over wins in we the steadily the chargers adapters
strong booked and added bars the for the like wins fully that have about. quarter are I talked Philips power We
to solutions Our are our is also ahead plan target, partners, a strong Diodes' strong solution for either again, expansion, our is done and recent now team package PQFN including and And testament metric charger that. to to report to PQFN compact ongoing. and in released exceed we a that capacity. which the a our our a of are and products We This the month. of announcement ahead partner million ecosystem us as X XX is adapters is, has pleased achieve partner set QX home package used XXX we watts a well previously X to sustained and place previously and as have this in we our exceeding a package million with have second in place, -- capacity very our key outsourcing now month as have or qualified we now in had said.
We have for leadership plan. Transphorm compact a higher XxX the power a GaN. segment, power versus PQFN higher new other enabled In also area package on
than We others, XX have time the with last And now we in design-ins that overall introduction. grown more a have from very prominent gaming recently, XX added having and supplier among production.
here the will talked Solutions in announcement is partner. power new used record power the our X.X-kilowatt coverage. high product as automotive and about design -- Transphorm earlier. with widely new GenX that higher GenX I higher our to a with be the power also architecture to accelerate goal that and way, secure even remains we power a we GaN where products design-ins are amongst Totem-pole, also, products important well, broad GenX higher And wins IP and totem-pole new did today, plan AEC release key a to today by very has
stage. as all of have and early as sampling last we and commercially well. partners in and I'm to government around execution these value Epi it's proposition are now said report in areas We business, parts business that, our important time, strong pleased and our and Strategic qualified
from inherent drivability Within FET lends stemming performance. better to of of XXX the watt the solution at and BoM TGAN designability and ease GaN technology Diodes success Inc., minimized high itself with well and performance the
and qualified was Yaskawa major With other the Yaskawa's note on the Silanna, the companies development recently Marelli milestone, process achievement technology of progress having and partner strong product completion innovator quarter shareholders, million equity the and good $X GenX with to was continue targeted for of in milestones now licensing in facilities. business supply, very our also customer our our revenue this continued We led GaN milestones. recognition our key completed which Epi With towards Epi conversion our focus Nexperia, the area. the with controller AEC with product recent partners are parts. customer is An and who especially with to DoD now transfer continued to another a development, RF July important in business to along
target as to that well activity still commercial the a the full and SAS RF of will are to ahead. our win that we partnership announced going looking GaN GWC We be continuing we completing as details in steam get
on more activities contract XXXX. now than over McAulay Cameron very have DARPA to And on before activity deliver $X.X quick milestones significant will talk million significant, Our I the also commenced revenue A hand calendar we the to contract. about Navy in financials. our recap new recent
Along with First licensing milestone been completed. and the commercial call was revenue achieved. also Nexperia, GenX has this, associated
now note we've With automotive converted automotive largest data design-ins. partnership aim backing garners reiteration partnerships. Inc., a ready our one shareholder parts. top-tier Diodes mega here The today continues will performance And the KKR, land. for the to SAS, ease scaling investment partners, future and enable in $XX this adding equity, like to as the from use and shareholder Adding Cameron. the to expect on that, strongest a GaN been GenX of over company we and that what saying our growth our in private qualification faster of up highlight we and from contract get The Yaskawa to for public support Second, synergy Transphorm partners. solution driving million of new equity of from to